Tom the Wise says: The n-type Si substrate is implanted with a p-type layer, and on top there is an Al layer. In between strips there are areas of SiO2.
The Al layer is usually 0.2-0.3 μm thick, but for special detectors it can be 0.1 um thick (this can be lumpy!).
The p-type layer is usually 0.4-0.5 μm thick, but for special detectors it can be 0.1 μm thick.
The dead layer of a detector is the sum of the Al layer and the p-type layer. It's possible to treat these layers separately, but it's usually good enough to treat them as if they were both Al (or both Si).
LEDA-type detectors have thin p layers and ordinary Al layers, so their total dead layer is 0.3-0.4 μm thick.
Most other detectors (S2, X2, CD) have ordinary p and ordinary Al, so their total dead layer is 0.6-0.8 μm thick.
I don't have techno-fear--I have techno JOY!!! --Eddie Izzard.
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